实验室先后承担20多项国家自然科学基金、科技部863计划、教育部、北京市的科研基金、仪器研发或平台建设项目，发表论文数十篇。近年来NDL实验室采用半导体IC行业fabless模式研发的外延电阻淬灭型（EQR）硅光电倍增器（SiPM），具有结构紧凑、“死区”面积小、微单元密度高、探测效率高、动态范围大、响应速度快、雪崩电压随温度变化系数小以及性价比高等优点，已成为有代表性的SiPM器件结构之一，特别适合于核医学成像（PET、SPECT、光子计数型CT）、辐射探测与安检、荧光测量、光谱测量等弱光探测与传感领域。目前NDL通过代工已经具备批量生产SiPM的能力。

起止时间	项目名称	项目来源	备注
2019.01-2022.12	具有X-Y交叉读出电极和按电荷分配原理工作的位置灵敏硅光电倍增器	国家自然科学基金项目(11875089)	主持
2016.1-2020.12	高性能Ge/Si单光子雪崩倍增探测器基础研究	国家自然科学基金重点项目(61534005)	参加
2015.1-2018.12	基于硅光电倍增管的正电子发射计算机断层扫描探测器研究	国家自然科学基金项目（11475025）	主持
2014.6-2015.12	时间相关拉曼-荧光光谱仪关键部件—时间相关光子计数探测器的研发	北京市科学技术委员会Z141100003414007	主持
2014.1-2017.12	蓝紫光响应增强的大动态范围硅光电倍增器的研究	国家自然科学基金项目(11375029)	主持
2013.01-2016.12	新结构硅光电倍增器及其工作模式研究	国家自然科学基金项目(11275026)	主持
2011.01-2013.12	采用硅雪崩漂移探测器的闪烁探测器研究	国家自然科学基金数理科学部（11005010）	主持
2010.01-2012.12	一种快速、高灵敏光谱测量方法及其在天文探测中的应用研究	国家自然科学基金联合基金项目(10978008)	主持
2009.01-2011.12	一种新的硅漂移探测器结构及工作模式的研究	国家自然科学基金项目(10875014)	主持
2008.01-2010.12	一种新型硅光电倍增探测器的研究	国家自然科学基金项目(10775016)	主持
2008.01-2010.12	新结构低能X射线晶体管探测器研究	国家自然科学基金项目（10705005）	主持
2005.01-2005.12	GaN半导体光电材料的规模化关键生产技术的检测设备	863计划(2004AA31g080)	共同主持
2002.11-2004.11	偶载场效应晶体管的工艺优化和应用验证	国家自然科学基金专项基金项目（60244004）	主持
2002.7-2004.6	能直接测量波长的新型光电探测器及其阵列的研制	863计划（2002AA313120）	主持

• Yu Peng, Wenxing Lv, Lei Dai, Tianqi Zhao, Kun Liang, Ru Yang, and Dejun Han，“A Square-Bordered Position-Sensitive Silicon Photomultiplier Toward Distortion-Free Performance With High Spatial Resolution”，IEEE ELECTRON DEVICE LETTERS, VOL. 41, NO. 12, DECEMBER 2020，pp.1802-1805.

• LEI DAI,JIAN LIU,KUN LIANG,RU YANG,DEJUN HAN,AND BO LU，“Realization of a time-correlated photon counting technique for fluorescence analysis”，Biomedical Optics Express，Vol. 11, No. 4，2020，pp.2205-2212.

• Tianqi Zhao, Lei Dai, Yu Peng, Baicheng Li, Jian Liu, Kun Liang, Ru Yang and Dejun Han, “Feasibility of High-Resolution PET Detector Readout by Two-Dimensional Tetra-Lateral Position-Sensitive Silicon Photomultiplier”, IEEE Transactions on Radiation and Plasma Medical Sciences, VOL. 3, NO. 6, 2019，pp.621-625
• YU PENG,LEI DAI,TIANQI ZHAO,JIAN LIU,KUN LIANG,RU YANG,AND DEJUN HAN，“Single-photon image sensor at room temperature with only four anodes”，Vol. 27, No. 15 | 22 Jul 2019 | OPTICS EXPRESS 21194-21203.
• JIAN LIU, LEI DAI, BAOZHOU ZHANG, KUN LIANG, RU YANG, AND DEJUN HAN，“Ultra-Low Level Light Detection Based on the Poisson Statistics Algorithm and a Double Time Windows Technique With Silicon Photomultiplier”，Journal of the Electron Devices Society, Vol.7, pp.722-727, 2019.
• K. Liang, B. Li, L. Dai, H. Liu, R. Yang and D. Han, “Feasibility of PET detector readout by high-density Silicon Photomultipliers with epitaxial quenching resistors”, Journal of Instrumentation, 2019,14: C05009.

• Tianqi Zhao ; Yu Peng; Baicheng Li; Ran He; Kun Liang; Ru Yang; Dejun Han ,“High Time Resolved Two-Dimensional Tetra-lateral Position-Sensitive Silicon Photomultiplier”, IEEE Electron Device Letters, 2018, 39(2): 232-235.
• Tianqi Zhao, Baicheng Li, Chenhui Li, Ruiheng Wang, Quanlong Miao, Kun Liang, Ru Yang, Dejun Han,“New Distortion Correction Algorithm for Two-Dimensional Tetra-Lateral Position-Sensitive Silicon Photomultiplier”, IEEE Electron Device Letters, Volume 38, Issue 2, 2017: 228 ?C 231.
• Tianqi Zhao, Rhys Preston, Jiali Jiang, Jianquan Jia, Yi Liu, Kun Liang, Ru Yang,“Dejun Han, “Progresses of silicon photomultiplier technologies with epitaxial quenching resistors”，Nuclear Inst. and Methods in Physics Research, A 912 (2018) 252?C254

• TIANQI ZHAO, YU PENG, QUANLONG MIAO, BAICHENG LI, KUN LIANG, RU YANG, AND DEJUN HAN, “One-dimensional single-photon position sensitive silicon photomultiplier and its application in Raman spectroscopy”, OPTICS EXPRESS, Vol. 25, No. 19, Sep 2017: 22820-22828.
• Baicheng Li, Shenyuan Wang, Chenhui Li, Tianqi Zhao, Quanlong Miao, Ruiheng Wang, Jianquan Jia, Kun Liang, Ru Yang, and Dejun Han “Time-Resolving Characteristics of Pixel- and Charge-Division-Type Position-Sensitive SiPMs With Epitaxial Quenching Resistors”, IEEE Transactions on Electron Devices, May 2017, 64(5):2239.
• Jiali Jiang, Jianquan Jia, Tianqi Zhao, Kun Liang, Ru Yang, Dejun Han, “Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors”, Instruments (Special Issue: Advances in Particle Detectors and Electronics for Fast Timing), 1, 5, 2017.
• Tianqi Zhao ; Rhys Preston; Jiali Jiang; Jianquan Jia; Yi Liu; Kun Liang; Ru Yang; Dejun Han ,“Progresses of silicon photomultiplier technologies with epitaxial quenching resistors, Nuclear Instruments & Methods in Physics Research A, https://doi.org/10.1016/j.nima.2017.11.069.
• Yu Peng ; Ruiheng Wang; Jianquan Jia; Tianqi Zhao; Kun Liang ; Ru Yang; Dejun Han, “An interdigital SiPM with coincidence measurement for rejection of dark noise”, Nuclear Inst. and Methods in Physics Research A, https://doi.org/10.1016/j.nima.2017.11.058.

• Baicheng Li, Quanlong Miao, Shenyuan Wang, Debin Hui, Tianqi Zhao, Kun Liang, Ru Yang, and Dejun Han "Time-Correlated Photon Counting (TCPC) technique based on a photon-number-resolving photodetector", Proc. SPIE 9858, Advanced Photon Counting Techniques X, 98580L (5 May 2016); https://doi.org/10.1117/12.2222962
• Baicheng Li, Yue Wang, Daoming Xi, Chenhui Li, Chen Zeng, Ruiheng Wang, Kun Liang, Ru Yang, Qingguo Xie, and Dejun Han，“Feasibility Study on Silicon Photomultiplier With Epitaxial Quenching Resistors as the Readout for PET Detectors”， IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 63, NO. 1, 2016，pp.17-21.

• WangYue, Chen Zongde, Li Chenhui, He Ran,Wang Shenyuan, Li Baicheng, Wang Ruiheng, Liang Kun, Yang Ru, Han Dejun，"Performance of ultra-small silicon photomultiplier array with active area of 0.12mm?0.12mm"，Nuclear Instruments & Methods in Physics Research A，787(2015)38?C41.
• Li, Chenhui, Wang, Shenyuan; Huo, Linzhang; Wang, Yue; Liang, Kun; Yang, Ru; Han, Dejun, “Position sensitive silicon photomultiplier with intrinsic continuous cap resistive layer”, IEEE Transactions on Electron Devices, v 61, n 9, p 3229-3232, 2014.
• Chunling Zhang, Liying Zhang, Ru Yang, Kun Liang, Dejun Han，“Time-Correlated Raman and Fluorescence Spectroscopy Based on a Silicon Photomultiplier and Time-Correlated Single Photon Counting Technique”，APPLIED SPECTROSCOPY，Vol. 67, NO. 2，pp.136-140, 2013.
• X.B. Hu, C.Z.Hu, D.P.Yin, L.Y.Zhang, C.N.Zhang, Y.Chen, G.Q.Zhang, R.Yang, K.Liang, Yu. Musienko, and D.J.Han，“The SiPM with bulk quenching resistor: progress at NDL and applications in Raman spectroscopy”, Nuclear Instruments and Methods in Physics Research A 695 (2012) 29?C34.
• Guoqing Zhang, Xiaobo Hu, Yue Cheng, Chunling Zhang, Lina Liu, Ru Yang, Kun Liang, and Dejun Han，“Fast identification of substance by measuring two Raman peaks with dual strip silicon photomultipliers and gated photon counting technique”，APPLIED OPTICS，Vol. 50（2011）4733-4736.
• Guoqing Zhang, Xiaobo Hu, Ru Yang, Chunling Zhang, Kun Liang, and Dejun Han，“Fast identification of trace substance by single-photon detection of characteristic Raman scatterings with gated coincidence technique and multipixel photon counters”，Applied Optics Vol. 49, Iss. 14, pp. 2601?C2605 (2010).
• G.Q. Zhang, X.B. Hu, C.Z. Hu, D.P. Yin, K. Liang, R. Yang and D.J. Han “Demonstration of a silicon photomultiplier with bulk integrated quenching resistors on epitaxial silicon”，Nuclear Instruments and Methods in Physics Research A，A, 621 (2010) 116?C120.

• G. G. Wu, H.R. Li, G.Q. Zhang, G. Zhan, J. Yuan, K. Liang, R. Yang, D.J.Han, “Demonstration of an avalanche drift detector with front illumination”, Nuclear Instruments and Methods in Physics Research A605 (2009) 301?C305.
• D. B. Zhou, D. J. Han , C. M. Sun, R. Yang, K. Liang，“A Novel Low-Threshold-Switch Phototransistor Based on Kirk Effect and High Purity Float-zone Silicon”, Appl. Phys. Lett. 90, 113513 (2007).
• W.J. Wang, X.L. Liu, W. Li, H.R. Ren, K. Liang and D.J. Han, “A Blue-violet Enhanced BDJ Photodetector and its Applications in the Probe Chip Measurements of the LEDs for Solid-state Lighting”, Sensors & Actuators: A. Physical，136 (2007) 168?C172.
• C.M. Sun, D.J. Han, L.Y. Sheng, X.R. Zhang, H.J. Zhang, R. Yang, L. Zhang, B.J. Ning，“Punch through float-zone silicon phototransistors with high linearity and sensitivity”,Nuclear Instruments and Methods in Physics Research A, 547 (2-3): 437-449 AUG 1 2005.
• D.J.Han, G. Batignani, and A. Del. Guerra, “Supergain transistors on high-purity float-zone silicon substrate”, Applied Physics Letters, Vol.83, no.7, pp.1450-1452, 2003.
• D. J. Han , G. Batignani, A. Del. Guerra, et al., “High-Gain Bipolar Detector on Float-Zone Silicon”, Nuclear Instruments and Methods in Physics Research A, Vol.512，No.3，pp.568-573, 2003.
• Dejun Han, Chuanmin Wang, Guangfu Wang, Shuchen Du, Liyan Shen, Xiaona Tian, and Xiurong Zhang, “Reduction of the Dead Region for Edge On Strip Detector by a Guard Ring Structure”,IEEE Transaction on Electron Device, Vol. 50, No. 2, pp.537-540, 2003.
• Han Dejun, Li Guohui, Yan Fengzhang, and En-Jun Zhu, “Ultrahigh Sensitive AlGaAs-GaAs Punch-Through Heterojunction Phototransistor”, IEEE Photonnics Technology Letters, Vol. 9, No. 10, pp.1391-1393, 1997.
• Han Dejun，K.T.Chan, Li Guohui, Wang Wenxun, En-Junzhu ,“A novel MESFET fabricated by a simple internal interconnection technique ”, IEEE Trans. on Electron Device, vo1.42, P.370-372, 1995.
• Han Dejun, “Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFET with a lateral linear doping channel”, Electron. Lett., Vol.26, pp.432-4, 1990.